IXA60IF1200NA Datasheet PDF - IXYS Semiconductor

●The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC™ diode offers fast and soft reverse recovery as well low operating forward voltage.

● Easy to parallel due to the positive temperature coefficient of the on-state voltage

● Reduced thermal resistance

● Low energy losses

● Fast switching

● Low tail current

● High power density

● Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages

● Short circuit capability