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IXBH16N170A
$ 25.122
IXBH16N170A Datasheet PDF (2 Pages)
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IXBH16N170A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.70 kV
Current Rating
16.0 A
Case/Package
TO-247-3
Power Dissipation
150 W
Rise Time
25.0 ns
Breakdown Voltage (Collector to Emitter)
1700 V
Reverse recovery time
360 ns
Input Power (Max)
150 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190000 mW

IXBH16N170A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXBH16N170A Documents

IXYS Semiconductor
2 Pages / 0.05 MByte

IXBH16N170 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 40A 250000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247AD
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