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IXBH42N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(3+Tab) TO-247AD

Pictures:

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Product Pictures

Documentation:

IXBH42N170 Datasheet (5 Pages)

IXBH42N170 Datasheet PDF (5 Pages)

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IXBH42N170 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

1.70 kV

Current Rating

75.0 A

Case/Package

TO-247-3

Power Dissipation

360000 mW

Rise Time

35.0 ns

Breakdown Voltage (Collector to Emitter)

1700 V

Reverse recovery time

1.32 µs

Input Power (Max)

360 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

360000 mW

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IXBH42N170 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXBH42N170 Environmental

IXBH42N170 Export Classifications

IXBH42N170 Function Overview

IXBH42N170 Documents

IXBH42N170 Datasheet

IXYS Semiconductor

5 Pages / 0.17 MByte

IXBH42 Documents

IXBH42N170 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(3+Tab) TO-247AD

IXBH42N170A Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1700V 42A 357000mW 3Pin(3+Tab) TO-247AD

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