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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGK120N120A3 Datasheet PDF
IXGK120N120A3
$ 29.322
IXGK120N120A3 Datasheet PDF (6 Pages)
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IXGK120N120A3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Power Dissipation
830000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
830 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
830000 mW

IXGK120N120A3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
5.31 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGK120N120A3 Documents

IXYS Semiconductor
6 Pages / 0.21 MByte

IXGK120N120 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 240A 830000mW 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
IGBT 1200V 200A 830W TO264
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