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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXBX55N300 Datasheet PDF
IXBX55N300
$ 375.956
IXBX55N300 Datasheet PDF (6 Pages)
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IXBX55N300 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Breakdown Voltage (Collector to Emitter)
3000 V
Reverse recovery time
1.9 µs
Input Power (Max)
625 W

IXBX55N300 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXBX55N300 Documents

IXYS Semiconductor
6 Pages / 0.21 MByte

IXBX55 Documents

IXYS Semiconductor
Igbt 3000V 130A 625W Plus247
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