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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGN82N120C3H1 Datasheet PDF
IXGN82N120C3H1
$ 40.697
IXGN82N120C3H1 Datasheet PDF (3 Pages)
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IXGN82N120C3H1 Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-227-4
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
7.9nF @25V
Input Power (Max)
595 W

IXGN82N120C3H1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGN82N120C3H1 Documents

IXYS Semiconductor
3 Pages / 0.09 MByte
IXYS Semiconductor
3 Pages / 0.19 MByte

IXGN82N120C3 Documents

IXYS Semiconductor
Trans IGBT Module N-CH 1200V 130A 595000mW 4Pin SOT-227B
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