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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXDN55N120D1 Datasheet PDF
IXDN55N120D1
$ 28.662
IXDN55N120D1 Datasheet PDF (4 Pages)
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IXDN55N120D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Positions
4 Position
Polarity
N-Channel
Power Dissipation
450 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
3.3nF @25V
Input Power (Max)
450 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
450 W

IXDN55N120D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IXDN55N120D1 Documents

IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
5 Pages / 0.07 MByte

IXDN55N120 Documents

IXYS Semiconductor
1200V high voltage IGBT with optional diode
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 450000mW 4Pin SOT-227B
IXYS Semiconductor
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