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Part Datasheet Search > MOSFETs > Infineon > IRF6725MTRPBF Datasheet PDF
IRF6725MTRPBF
$ 0.381
IRF6725MTRPBF Datasheet PDF (9 Pages)
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IRF6725MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
100 W
Number of Positions
5 Position
Drain to Source Resistance (on) (Rds)
1.7 mΩ
Polarity
N-CH
Power Dissipation
100 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
28A
Rise Time
22 ns
Input Capacitance (Ciss)
4700pF @15V(Vds)
Input Power (Max)
2.8 W
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 100W (Tc)

IRF6725MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6725MTRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.11 MByte

IRF6725 Documents

Infineon
Direct-FET N-CH 30V 28A
International Rectifier
Trans MOSFET N-CH 30V 28A 7Pin Direct-FET MX T/R
International Rectifier
Trans MOSFET N-CH 30V 28A 7Pin Direct-FET MX T/R
Infineon
Direct-FET N-CH 30V 28A
Infineon
Direct-FET N-CH 30V 28A
International Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.
International Rectifier
Directfet Power Mosfet
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