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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXDR30N120D1 Datasheet PDF
IXDR30N120D1
$ 3.87
IXDR30N120D1 Datasheet PDF (4 Pages)
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IXDR30N120D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
200 W
Rise Time
70 ns
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
40 ns
Input Power (Max)
200 W
Fall Time
70 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

IXDR30N120D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃

IXDR30N120D1 Documents

IXYS Semiconductor
4 Pages / 0.09 MByte
IXYS Semiconductor
8 Pages / 0.13 MByte

IXDR30N120 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50A, 2.4V, 200W, 1.2kV, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXDR30N120D1 IGBT Single Transistor, Isolated, 50A, 2.4V, 200W, 1.2kV, TO-247AD, 3Pins
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