$ 16.309

IXEN60N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

SOT-227-4

Description:

Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B

Pictures:

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Documentation:

IXEN60N120 Datasheet (11 Pages)

Package Outline Dimension on9 Page 10 Page

IXEN60N120 Datasheet PDF (11 Pages)

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IXEN60N120 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

4 Pin

Case/Package

SOT-227-4

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

3.8nF @25V

Input Power (Max)

445 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

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IXEN60N120 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Operating Temperature

-40℃ ~ 150℃ (TJ)

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IXEN60N120 Environmental

IXEN60N120 Function Overview

IXEN60N120 Documents

IXEN60N120 Datasheet

IXYS Semiconductor

11 Pages / 0.67 MByte

IXEN60N120 Other Datasheet PDF

IXYS Semiconductor

7 Pages / 0.19 MByte

IXEN60 Documents

IXEN60N120D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B

IXEN60N120 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B

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