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IXGM40N60A
$ 110.585
IXGM40N60A Datasheet PDF (4 Pages)
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IXGM40N60A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
75.0 A
Case/Package
TO-204
Power Dissipation
250000 mW
Rise Time
200 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
4.5nF @25V
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250000 mW

IXGM40N60A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGM40N60A Documents

IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

IXGM40N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin(2+Tab) TO-204AE
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