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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH16N50P Datasheet PDF
IXFH16N50P
$ 3.608
IXFH16N50P Datasheet PDF (4 Pages)
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IXFH16N50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
16.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
400 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Input Capacitance
2.25 nF
Gate Charge
43.0 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
16.0 A
Rise Time
25 ns
Input Capacitance (Ciss)
2250pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXFH16N50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH16N50P Documents

IXYS Semiconductor
4 Pages / 0.24 MByte

IXFH16N50 Documents

IXYS Semiconductor
TO-247 N-CH 500V 16A
IXYS Semiconductor
TO-247AD N-CH 500V 16A
Littelfuse
Power Field-Effect Transistor,
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