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IXFH20N60 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

TO-247AD N-CH 600V 20A

Pictures:

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Symbol

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Product Pictures

Documentation:

IXFH20N60 Datasheet (5 Pages)

IXFH20N60 Datasheet PDF (5 Pages)

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IXFH20N60 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

20.0 A

Case/Package

TO-247-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

350 mΩ

Polarity

N-Channel

Power Dissipation

300 W

Threshold Voltage

4.5 V

Input Capacitance

3.30 nF

Gate Charge

90.0 nC

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

300 V

Continuous Drain Current (Ids)

20.0 A

Rise Time

43 ns

Input Capacitance (Ciss)

4500pF @25V(Vds)

Input Power (Max)

300 W

Fall Time

40 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature (Max)

150 ℃

Power Dissipation (Max)

300W (Tc)

View Datasheet >

IXFH20N60 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Bulk

Material

Silicon

Weight

6 g

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

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