IXFH21N50 Datasheet PDF - IXYS Semiconductor

●The IXFH21N50 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and rugged polysilicon gate cell structure. It is suitable for DC-to-DC converters, synchronous rectification, DC choppers, switched-mode and resonant-mode power supplies.

● International standard packages

● Unclamped inductive switching (UIS) rating

● Low package inductance - Easy to drive and to protect

● Easy to mount with 1 screw (isolated mounting screw hole)

● High power surface-mount package

● High power density