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IXFH6N100F
$ 0.773
IXFH6N100F Datasheet PDF (2 Pages)
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IXFH6N100F Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.9 Ω
Polarity
N-Channel
Power Dissipation
180 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
1 kV
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
6.00 A
Rise Time
8.6 ns
Input Capacitance (Ciss)
1770pF @25V(Vds)
Fall Time
8.3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
180W (Tc)

IXFH6N100F Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Material
Silicon
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH6N100F Documents

IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
9 Pages / 1.06 MByte

IXFH6N100 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1kV 6A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 1000V 6A
IXYS Semiconductor
Trans MOSFET N-CH 1kV 6A 3Pin(3+Tab) TO-247AD
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