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Part Datasheet Search > MOSFETs > ST Microelectronics > STD80N10F7 Datasheet PDF
STD80N10F7
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STD80N10F7 Datasheet PDF (25 Pages)
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STD80N10F7 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
10 mΩ
Polarity
N-CH
Power Dissipation
85 W
Threshold Voltage
4.5 V
Input Capacitance
3100 pF
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
70A
Rise Time
32 ns
Input Capacitance (Ciss)
3100pF @50V(Vds)
Input Power (Max)
85 W
Fall Time
13 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
85W (Tc)

STD80N10F7 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STD80N10F7 Documents

ST Microelectronics
25 Pages / 1.32 MByte

STD80N10 Documents

ST Microelectronics
DPAK N-CH 100V 70A
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