$ 2.259

IXFH80N10Q Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

TO-247AD N-CH 100V 80A

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IXFH80N10Q Datasheet (3 Pages)

IXFH80N10Q Datasheet PDF (3 Pages)

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IXFH80N10Q Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Voltage Rating (DC)

100 V

Current Rating

80.0 A

Case/Package

TO-247-3

Drain to Source Resistance (on) (Rds)

15.0 mΩ

Polarity

N-Channel

Power Dissipation

360 W

Drain to Source Voltage (Vds)

100 V

Continuous Drain Current (Ids)

80.0 A

Rise Time

70.0 ns

Input Capacitance (Ciss)

4500pF @25V(Vds)

Input Power (Max)

360 W

Power Dissipation (Max)

360W (Tc)

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IXFH80N10Q Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFH80N10Q Environmental

IXFH80N10Q Function Overview

IXFH80N10Q Documents

IXFH80N10Q Datasheet

IXYS Semiconductor

3 Pages / 0.05 MByte

IXFH80N10Q Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.05 MByte

IXFH80N10 Documents

IXFH80N10 Datasheet PDF

IXYS Semiconductor

TO-247AD N-CH 100V 80A

IXFH80N10Q Datasheet PDF

IXYS Semiconductor

TO-247AD N-CH 100V 80A

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