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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFK36N60 Datasheet PDF
IXFK36N60
$ 17.15
IXFK36N60 Datasheet PDF (4 Pages)
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IXFK36N60 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
36.0 A
Case/Package
TO-264-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
180 mΩ
Polarity
N-Channel
Power Dissipation
500 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
36.0 A
Rise Time
45 ns
Input Capacitance (Ciss)
9000pF @25V(Vds)
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
500W (Tc)

IXFK36N60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
19.96 mm
Size-Width
5.13 mm
Size-Height
26.16 mm
Weight
10.0 mg
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFK36N60 Documents

IXYS Semiconductor
4 Pages / 0.18 MByte

IXFK36 Documents

IXYS Semiconductor
Trans MOSFET N-CH 600V 36A 3Pin(3+Tab) TO-264AA
IXYS Semiconductor
TO-264 N-CH 150V 360A
IXYS Semiconductor
TO-264 N-CH 100V 360A
IXYS Semiconductor
Trans MOSFET N-CH 600V 36A 3Pin(3+Tab) TO-264AA
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