IXFK150N30P3 Datasheet PDF - IXYS Semiconductor

●The IXFK150N30P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today"s demanding high-voltage conversion system.

● Avalanche rating

● Dynamic dV/dt rating

● Low Qg

● Low static drain-to-source ON-resistance

● Low drain-to-tab capacitance

● Low package inductance

● Easy to mount

● Space saving