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Part Datasheet Search > High Voltage MOS > IXYS Semiconductor > IXFK30N100Q2 Datasheet PDF
IXFK30N100Q2
$ 28.849
IXFK30N100Q2 Datasheet PDF (4 Pages)
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IXFK30N100Q2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.4 Ω
Polarity
N-Channel
Power Dissipation
735 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
1 kV
Continuous Drain Current (Ids)
30.0 A
Rise Time
14 ns
Input Capacitance (Ciss)
8200pF @25V(Vds)
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
735W (Tc)

IXFK30N100Q2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Weight
10.0 mg
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFK30N100Q2 Documents

IXYS Semiconductor
4 Pages / 0.56 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXFK30N100 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXFK30N100Q2 Power MOSFET, N Channel, 30A, 1kV, 400mohm, 10V, 5V
IXYS Semiconductor
HiPerFET Power MOSFETs Q2-Class
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