IXFN170N10 Datasheet PDF - IXYS Semiconductor

●The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.

● International standard packages

● Rugged polysilicon gate cell structure

● Unclamped inductive switching (UIS) rating

● Low package inductance

● Easy to mount

● Space saving

● UL94V-0 Flammability rating