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IXFN44N80P
$ 1.85
IXFN44N80P Datasheet PDF (4 Pages)
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IXFN44N80P Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
0.19 Ω
Polarity
N-Channel
Power Dissipation
694 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
44.0 A
Rise Time
22 ns
Input Capacitance (Ciss)
12000pF @25V(Vds)
Fall Time
27 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
694W (Tc)

IXFN44N80P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN44N80P Documents

IXYS Semiconductor
4 Pages / 0.08 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
IXYS Semiconductor
4 Pages / 0.08 MByte

IXFN44N80 Documents

IXYS Semiconductor
Trans MOSFET N-CH 800V 44A 4Pin SOT-227B
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFN44N80P Power MOSFET, N Channel, 44A, 800V, 190mohm, 10V, 5V
IXYS Semiconductor
SOT-227B N-CH 800V 37A
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