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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN170P10P Datasheet PDF
IXTN170P10P
$ 14.84
IXTN170P10P Datasheet PDF (5 Pages)
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IXTN170P10P Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Polarity
P-CH
Power Dissipation
890000 mW
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
170A
Input Capacitance (Ciss)
12600pF @25V(Vds)
Input Power (Max)
890 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
890W (Tc)

IXTN170P10P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTN170P10P Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte

IXTN170P10 Documents

IXYS Semiconductor
SOT-227B P-CH 100V 170A
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