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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX64N60P Datasheet PDF
IXFX64N60P
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IXFX64N60P Datasheet PDF (5 Pages)
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IXFX64N60P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
64.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
96.0 mΩ
Polarity
N-Channel
Power Dissipation
1040W (Tc)
Input Capacitance
1.15 nF
Gate Charge
200 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
64.0 A
Rise Time
23 ns
Input Capacitance (Ciss)
12000pF @25V(Vds)
Input Power (Max)
1040 W
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1040W (Tc)

IXFX64N60P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX64N60P Documents

IXYS Semiconductor
5 Pages / 0.16 MByte

IXFX64N60 Documents

IXYS Semiconductor
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N-Channel 600V 1040W 200NC PolarHV HiPerFET Mosfet Through Hole - PLUS-247
Littelfuse
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