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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGA30N120B3 Datasheet PDF
IXGA30N120B3
$ 4.913
IXGA30N120B3 Datasheet PDF (7 Pages)
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IXGA30N120B3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
300 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
300 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

IXGA30N120B3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
9.65 mm
Size-Width
10.41 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGA30N120B3 Documents

IXYS Semiconductor
7 Pages / 0.2 MByte
IXYS Semiconductor
6 Pages / 0.2 MByte

IXGA30N120 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(2+Tab) TO-263AA
Littelfuse
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK
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