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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH30N60C3C1 Datasheet PDF
IXGH30N60C3C1
$ 8.766
IXGH30N60C3C1 Datasheet PDF (7 Pages)
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IXGH30N60C3C1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
220 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
220 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
220000 mW

IXGH30N60C3C1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH30N60C3C1 Documents

IXYS Semiconductor
7 Pages / 0.28 MByte
IXYS Semiconductor
8 Pages / 0.27 MByte

IXGH30N60C3 Documents

IXYS Semiconductor
IGBT 600V 60A 220W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 220000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 60A 220000mW 3Pin(3+Tab) TO-247
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