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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXSH30N60B Datasheet PDF
IXSH30N60B
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IXSH30N60B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
200 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

IXSH30N60B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXSH30N60B Documents

IXYS Semiconductor
4 Pages / 0.13 MByte
IXYS Semiconductor
4 Pages / 0.13 MByte

IXSH30N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 250000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 50A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 50A 200W TO247
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