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IXGN320N60A3 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

SOT-227-4

Description:

Trans IGBT Chip N-CH 600V 320A 735000mW 4Pin SOT-227B

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Documentation:

IXGN320N60A3 Datasheet (4 Pages)

IXGN320N60A3 Datasheet PDF (4 Pages)

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IXGN320N60A3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-227-4

Power Rating

735 W

Power Dissipation

735000 mW

Breakdown Voltage (Collector to Emitter)

600 V

Input Capacitance (Cies)

18nF @25V

Input Power (Max)

735 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

735000 mW

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IXGN320N60A3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

38.23 mm

Size-Width

25.42 mm

Size-Height

9.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXGN320N60A3 Environmental

IXGN320N60A3 Export Classifications

IXGN320N60A3 Function Overview

IXGN320N60A3 Documents

IXGN320N60A3 Datasheet

IXYS Semiconductor

4 Pages / 0.82 MByte

IXGN320N60A3 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.15 MByte

IXGN320N60 Documents

IXGN320N60A3 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 600V 320A 735000mW 4Pin SOT-227B

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