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Part Datasheet Search > MOSFETs > ST Microelectronics > STB120NF10T4 Datasheet PDF
STB120NF10T4
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STB120NF10T4 Datasheet PDF (21 Pages)
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STB120NF10T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
120 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0105 Ω
Polarity
N-Channel
Power Dissipation
312 W
Threshold Voltage
4 V
Input Capacitance
5200 pF
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
110 A
Rise Time
90 ns
Input Capacitance (Ciss)
5200pF @25V(Vds)
Input Power (Max)
312 W
Fall Time
68 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
312000 mW

STB120NF10T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Weight
0.013607772 kg
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB120NF10T4 Documents

ST Microelectronics
21 Pages / 0.91 MByte
ST Microelectronics
21 Pages / 0.91 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
1 Pages / 0.12 MByte

STB120NF10 Documents

ST Microelectronics
D2PAK N-CH 100V 110A
ST Microelectronics
D2PAK N-CH 100V 110A
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