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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGN60N60 Datasheet PDF
IXGN60N60
$ 5.058
IXGN60N60 Datasheet PDF (6 Pages)
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IXGN60N60 Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Voltage Rating (DC)
600 V
Current Rating
100 A
Case/Package
SOT-227-4
Power Dissipation
250000 mW
Rise Time
30.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Capacitance (Cies)
4nF @25V
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250000 mW

IXGN60N60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGN60N60 Documents

IXYS Semiconductor
6 Pages / 0.47 MByte
IXYS Semiconductor
9 Pages / 0.73 MByte

IXGN60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 100A 250000mW 4Pin SOT-227B
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 480000mW 4Pin SOT-227B
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 4Pin SOT-227B
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