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IXSN35N100U1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

SOT-227-4

Description:

IGBT 64A 1000V SOT-227B

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IXSN35N100U1 Datasheet (6 Pages)

IXSN35N100U1 Datasheet PDF (6 Pages)

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IXSN35N100U1 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Case/Package

SOT-227-4

Breakdown Voltage (Collector to Emitter)

1000 V

Input Capacitance (Cies)

4.5nF @25V

Input Power (Max)

205 W

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IXSN35N100U1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Operating Temperature

-40℃ ~ 150℃ (TJ)

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IXSN35N100U1 Environmental

IXSN35N100U1 Function Overview

IXSN35N100U1 Documents

IXSN35N100U1 Datasheet

IXYS Semiconductor

6 Pages / 0.07 MByte

IXSN35N100U1 Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.08 MByte

IXSN35N100 Documents

IXSN35N100U1 Datasheet PDF

IXYS Semiconductor

IGBT 64A 1000V SOT-227B

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