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IXGQ85N33PCD1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-3-3

Description:

Trans IGBT Chip N-CH 330V 85A 150000mW 3Pin(3+Tab) TO-3P

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Product Pictures

Documentation:

IXGQ85N33PCD1 Datasheet (5 Pages)

IXGQ85N33PCD1 Datasheet PDF (5 Pages)

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IXGQ85N33PCD1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Power Dissipation

150000 mW

Breakdown Voltage (Collector to Emitter)

330 V

Reverse recovery time

250 ns

Input Power (Max)

150 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

150000 mW

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IXGQ85N33PCD1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXGQ85N33PCD1 Environmental

IXGQ85N33PCD1 Function Overview

IXGQ85N33PCD1 Documents

IXGQ85N33PCD1 Datasheet

IXYS Semiconductor

5 Pages / 0.14 MByte

IXGQ85N33 Documents

IXGQ85N33PCD1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 330V 85A 150000mW 3Pin(3+Tab) TO-3P

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