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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGR32N170H1 Datasheet PDF
IXGR32N170H1
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IXGR32N170H1 Datasheet PDF (3 Pages)
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IXGR32N170H1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
200 W
Rise Time
250 ns
Breakdown Voltage (Collector to Emitter)
1700 V
Reverse recovery time
230 ns
Input Power (Max)
200 W
Fall Time
250 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200000 mW

IXGR32N170H1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGR32N170H1 Documents

IXYS Semiconductor
3 Pages / 0.08 MByte
IXYS Semiconductor
8 Pages / 0.13 MByte

IXGR32N170 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR32N170H1 IGBT Single Transistor, Isolated, 26A, 3.5V, 200W, 1.7kV, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 26A 200000mW 3Pin(3+Tab) ISOPLUS 247
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