NSV60200LT1G Datasheet PDF - ON Semiconductor

●Jump-start your electronic circuit design with this versatile PNP NSV60200LT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.