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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGR40N60B2 Datasheet PDF
IXGR40N60B2
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IXGR40N60B2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
ISOPLUS-247
Polarity
N-Channel
Power Dissipation
167 W
Rise Time
82.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
167 W
Operating Temperature (Max)
150 ℃

IXGR40N60B2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGR40N60B2 Documents

IXYS Semiconductor
6 Pages / 0.6 MByte
IXYS Semiconductor
6 Pages / 0.48 MByte

IXGR40N60 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR40N60B2D1 IGBT Single Transistor, Isolated, 60A, 1.9V, 167W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) ISOPLUS247
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR40N60C2 IGBT Single Transistor, Isolated, 56A, 2.7V, 170W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR40N60B2 IGBT Single Transistor, Isolated, 60A, 1.9V, 167W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 200000mW 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 56A 170000mW 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
Igbt 600V Isoplus247
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