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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH10P60 Datasheet PDF
IXTH10P60
$ 1.128

IXTH10P60 Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
TO-247-3
Description:
TO-247AD P-CH 600V 10A
Pictures:
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Product Pictures
Documentation:
IXTH10P60 Datasheet (6 Pages)
IXTH10P60 Datasheet PDF (6 Pages)
View Datasheet
Click page to view the detail

IXTH10P60 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-600 V
Current Rating
-10.0 A
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
1 Ω
Polarity
P-CH
Power Dissipation
300 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
27 ns
Input Capacitance (Ciss)
4700pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
35 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)
View Datasheet >

IXTH10P60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXTH10P60 Documents

IXTH10P60 Datasheet
IXYS Semiconductor
6 Pages / 0.12 MByte
IXTH10P60 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.12 MByte

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