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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH130N20T Datasheet PDF
IXTH130N20T
$ 4.79

IXTH130N20T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Number of Channels
1 Channel
Polarity
N-CH
Power Dissipation
830W (Tc)
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
130A
Input Capacitance (Ciss)
8800pF @25V(Vds)
Power Dissipation (Max)
830W (Tc)

IXTH130N20T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTH130N20T Documents

IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.16 MByte

IXTH130N20 Documents

IXYS Semiconductor
TO-247 N-CH 200V 130A
Littelfuse
Power Field-Effect Transistor,
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