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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN56N90P Datasheet PDF
IXFN56N90P
$ 46.5

IXFN56N90P Specifications

TYPE
DESCRIPTION
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Channels
1 Channel
Polarity
N-CH
Power Dissipation
1000 W
Threshold Voltage
3.5V ~ 6.5V
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
56A
Rise Time
80 ns
Input Capacitance (Ciss)
23000pF @25V(Vds)
Input Power (Max)
1000 W
Fall Time
38 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1000W (Tc)

IXFN56N90P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN56N90P Documents

IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

IXFN56N90 Documents

IXYS Semiconductor
SOT-227B N-CH 900V 56A
IXYS Semiconductor
Polar HiPerFET Power MOSFET
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