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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN60N50L2 Datasheet PDF
IXTN60N50L2
$ 35.12
IXTN60N50L2 Datasheet PDF (6 Pages)
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IXTN60N50L2 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
100 mΩ
Polarity
N-Channel
Power Dissipation
735 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Rise Time
40 ns
Input Capacitance (Ciss)
24000pF @25V(Vds)
Input Power (Max)
735 W
Fall Time
38 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
735W (Tc)

IXTN60N50L2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
12.22 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTN60N50L2 Documents

IXYS Semiconductor
6 Pages / 0.12 MByte
IXYS Semiconductor
16 Pages / 0.13 MByte

IXTN60N50 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXTN60N50L2 MOSFET Transistor, LINEAR L2™, N Channel, 53A, 500V, 100mohm, 10V, 2.5V
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