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IXTN62N50L
$ 62.668
IXTN62N50L Datasheet PDF (5 Pages)
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IXTN62N50L Specifications

TYPE
DESCRIPTION
Mounting Style
Panel
Number of Pins
4 Pin
Case/Package
SOT-227-4
Power Dissipation
800 W
Drain to Source Voltage (Vds)
500 V
Rise Time
85 ns
Input Capacitance (Ciss)
11500pF @25V(Vds)
Fall Time
75 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
800000 mW

IXTN62N50L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.42 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTN62N50L Documents

IXYS Semiconductor
5 Pages / 0.08 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTN62N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 62A 4Pin SOT-227B
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