$ 3.327

IXTP01N100D Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220AD N-CH 1000V

Pictures:

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Product Pictures

Documentation:

IXTP01N100D Datasheet (2 Pages)

IXTP01N100D Datasheet PDF (2 Pages)

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IXTP01N100D Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Voltage Rating (DC)

1.00 kV

Current Rating

4.00 A

Case/Package

TO-220-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

80 Ω

Polarity

N-CH

Power Dissipation

25 W

Drain to Source Voltage (Vds)

1000 V

Breakdown Voltage (Drain to Source)

1000 V

Continuous Drain Current (Ids)

100 mA

Rise Time

10 ns

Input Capacitance (Ciss)

120pF @25V(Vds)

Input Power (Max)

1.1 W

Fall Time

64 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

1.1W (Ta), 25W (Tc)

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IXTP01N100D Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.66 mm

Size-Width

4.83 mm

Size-Height

9.15 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTP01N100D Environmental

IXTP01N100D Function Overview

IXTP01N100D Documents

IXTP01N100D Datasheet

IXYS Semiconductor

2 Pages / 0.09 MByte

IXTP01N100D Other Datasheet PDF

IXYS Semiconductor

13 Pages / 0.88 MByte

IXTP01N100 Documents

IXTP01N100D Datasheet PDF

IXYS Semiconductor

TO-220AD N-CH 1000V

IXTP01N100D Datasheet PDF

Littelfuse

Power Field-Effect Transistor,

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