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IXTP08N100D2
$ 1.005
IXTP08N100D2 Datasheet PDF (5 Pages)
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IXTP08N100D2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
60 W
Drain to Source Voltage (Vds)
1000 V
Rise Time
57 ns
Input Capacitance (Ciss)
325pF @25V(Vds)
Fall Time
48 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
60W (Tc)

IXTP08N100D2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTP08N100D2 Documents

IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
6 Pages / 0.26 MByte

IXTP08N100 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1kV 0.8A 3Pin(3+Tab) TO-220AB
IXYS Semiconductor
Trans MOSFET N-CH 1kV 0.8A 3Pin(3+Tab) TO-220
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