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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTP50N20P Datasheet PDF
IXTP50N20P
$ 3.004
IXTP50N20P Datasheet PDF (5 Pages)
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IXTP50N20P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Polarity
N-CH
Power Dissipation
360 W
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
50A
Rise Time
35 ns
Input Capacitance (Ciss)
2720pF @25V(Vds)
Input Power (Max)
360 W
Fall Time
30 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
360000 mW

IXTP50N20P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTP50N20P Documents

IXYS Semiconductor
5 Pages / 0.15 MByte

IXTP50N20 Documents

IXYS Semiconductor
TO-220 N-CH 200V 50A
IXYS Semiconductor
Trans MOSFET N-CH 200V 20A 3Pin(3+Tab) TO-220
Littelfuse
Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-220
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