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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTP60N20T Datasheet PDF
IXTP60N20T
$ 3.181

IXTP60N20T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
500W (Tc)
Drain to Source Voltage (Vds)
200 V
Rise Time
13 ns
Input Capacitance (Ciss)
4530pF @25V(Vds)
Fall Time
22 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500W (Tc)

IXTP60N20T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTP60N20T Documents

IXYS Semiconductor
4 Pages / 0.13 MByte
IXYS Semiconductor
4 Pages / 0.13 MByte

IXTP60N20 Documents

IXYS Semiconductor
Mosfet n-Ch 200V 60A To-220
Littelfuse
Power Field-Effect Transistor,
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