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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH80N20L Datasheet PDF
IXTH80N20L
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IXTH80N20L Datasheet PDF (5 Pages)
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IXTH80N20L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
32 mΩ
Polarity
N-CH
Power Dissipation
520 W
Input Capacitance
616 pF
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
80A
Rise Time
44 ns
Input Capacitance (Ciss)
6160pF @25V(Vds)
Fall Time
29 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
520W (Tc)

IXTH80N20L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTH80N20L Documents

IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTH80N20 Documents

IXYS Semiconductor
TO-247 N-CH 200V 80A
Littelfuse
Power Field-Effect Transistor,
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