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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTP80N10T Datasheet PDF
IXTP80N10T
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IXTP80N10T Datasheet PDF (5 Pages)
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IXTP80N10T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
14 mΩ
Power Dissipation
230 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Rise Time
54 ns
Input Capacitance (Ciss)
3040pF @25V(Vds)
Input Power (Max)
230 W
Fall Time
48 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
230W (Tc)

IXTP80N10T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.83 mm
Size-Height
9.15 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXTP80N10T Documents

IXYS Semiconductor
5 Pages / 0.18 MByte

IXTP80N10 Documents

IXYS Semiconductor
Trans MOSFET N-CH 100V 80A 3Pin(3+Tab) TO-220
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