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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ10P50P Datasheet PDF
IXTQ10P50P
$ 4.126
IXTQ10P50P Datasheet PDF (6 Pages)
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IXTQ10P50P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
300 W
Drain to Source Voltage (Vds)
500 V
Rise Time
28 ns
Input Capacitance (Ciss)
2840pF @25V(Vds)
Fall Time
44 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IXTQ10P50P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.8 mm
Size-Width
4.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ10P50P Documents

IXYS Semiconductor
6 Pages / 0.17 MByte
IXYS Semiconductor
6 Pages / 0.17 MByte

IXTQ10P50 Documents

IXYS Semiconductor
MOSFET P-CH 500V 10A TO-3P
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