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Part Datasheet Search > MOSFETs > ON Semiconductor > NDF04N60ZH Datasheet PDF
NDF04N60ZH
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NDF04N60ZH Datasheet PDF (9 Pages)
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NDF04N60ZH Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
2 Ω
Polarity
N-CH
Power Dissipation
30 W
Threshold Voltage
3.9 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
4.8A
Rise Time
9 ns
Input Capacitance (Ciss)
640pF @25V(Vds)
Input Power (Max)
30 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
30W (Tc)

NDF04N60ZH Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

NDF04N60ZH Documents

ON Semiconductor
9 Pages / 0.13 MByte
ON Semiconductor
9 Pages / 0.13 MByte

NDF04N60 Documents

ON Semiconductor
Power MOSFET, N Channel, 4.8A, 600V, 1.8Ω, 10V, 3.9V
ON Semiconductor
TO-220F N-CH 600V 4.8A
ON Semiconductor
Trans MOSFET N-CH 600V 4.8A 3Pin TO-220FP Rail
ON Semiconductor
TO-220 FULLPAK-3 N-CH 600V 4.8A 2Ω
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