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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTQ88N30P Datasheet PDF
IXTQ88N30P
$ 3.322
IXTQ88N30P Datasheet PDF (5 Pages)
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IXTQ88N30P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.04 Ω
Polarity
N-Channel
Power Dissipation
600 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
300 V
Continuous Drain Current (Ids)
88.0 A
Rise Time
24 ns
Reverse recovery time
250 ns
Input Capacitance (Ciss)
6300pF @25V(Vds)
Input Power (Max)
600 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
600W (Tc)

IXTQ88N30P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTQ88N30P Documents

IXYS Semiconductor
5 Pages / 0.31 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte

IXTQ88N30 Documents

IXYS Semiconductor
Trans MOSFET N-CH 300V 88A 3Pin(3+Tab) TO-3P
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