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IXTT110N10L2 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

TO-268 N-CH 100V 110A

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Documentation:

IXTT110N10L2 Datasheet (5 Pages)

IXTT110N10L2 Datasheet PDF (5 Pages)

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IXTT110N10L2 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Polarity

N-CH

Power Dissipation

600 W

Input Capacitance

10.5 nF

Drain to Source Voltage (Vds)

100 V

Continuous Drain Current (Ids)

110A

Rise Time

130 ns

Input Capacitance (Ciss)

10500pF @25V(Vds)

Input Power (Max)

600 W

Fall Time

24 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

600W (Tc)

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IXTT110N10L2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTT110N10L2 Environmental

IXTT110N10L2 Function Overview

IXTT110N10L2 Documents

IXTT110N10L2 Datasheet

IXYS Semiconductor

5 Pages / 0.13 MByte

IXTT110N10L2 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.13 MByte

IXTT110N10 Documents

IXTT110N10P Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 100V 110A

IXTT110N10L2 Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 100V 110A

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